APTM10DDAM19T3G - Microsemi Corporation - Transistors - FETs, MOSFETs - Arrays
REF: APTM10DDAM19T3G Microsemi Corporation
APTM10DDAM19T3G

Microsemi Corporation

MOSFET 2N-CH 100V 70A SP3

APTM10DDAM19T3G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 2N-CH 100V 70A SP3. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP3, power - max 208W.

In Stock: 3,422

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70A
Rds On (Max) @ Id, Vgs21mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5100pF @ 25V
Power - Max208W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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