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APTM100VDA35T3G

In Stock: 3,611
APTM100VDA35T3G - Microsemi Corporation - Transistors - FETs, MOSFETs - Arrays
REF: APTM100VDA35T3G Microsemi Corporation
APTM100VDA35T3G

Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

APTM100VDA35T3G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 2N-CH 1000V 22A SP3. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP3, power - max 390W.

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In Stock: 3,611

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C22A
Rds On (Max) @ Id, Vgs420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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