Name: APTM100H80FT1G
Brand: Microsemi Corporation
SKU: APTM100H80FT1G
Availability: InStock

REF: APTM100H80FT1G Microsemi Corporation

APTM100H80FT1G

MOSFET 4N-CH 1000V 11A SP1

APTM100H80FT1G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 4N-CH 1000V 11A SP1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP1, power - max 208W.

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In Stock: 5,454

Specifications

14 parameters

Product Status	Obsolete
FET Type	4 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	11A
Rds On (Max) @ Id, Vgs	960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3876pF @ 25V
Power - Max	208W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1