Name: APTM100A46FT1G
Brand: Microsemi Corporation
SKU: APTM100A46FT1G
Availability: InStock

REF: APTM100A46FT1G Microsemi Corporation

APTM100A46FT1G

MOSFET 2N-CH 1000V 19A SP1

APTM100A46FT1G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 2N-CH 1000V 19A SP1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP1, power - max 357W.

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In Stock: 6,402

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	19A
Rds On (Max) @ Id, Vgs	552mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 25V
Power - Max	357W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1