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APTC90H12T1G

In Stock: 5,589
APTC90H12T1G - Microsemi Corporation - Transistors - FETs, MOSFETs - Arrays
REF: APTC90H12T1G Microsemi Corporation
APTC90H12T1G

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP1

APTC90H12T1G is a Transistors - FETs, MOSFETs - Arrays manufactured by Microsemi Corporation. MOSFET 4N-CH 900V 30A SP1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SP1, power - max 250W.

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In Stock: 5,589

Specifications

14 parameters
Product StatusObsolete
FET Type4 N-Channel (Half Bridge)
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C30A
Rds On (Max) @ Id, Vgs120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 100V
Power - Max250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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