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VWM200-01P

In Stock: 7,303
VWM200-01P - IXYS - Transistors - FETs, MOSFETs - Arrays
REF: VWM200-01P IXYS
VWM200-01P

IXYS

MOSFET 6N-CH 100V 210A V2

VWM200-01P is a Transistors - FETs, MOSFETs - Arrays manufactured by IXYS. MOSFET 6N-CH 100V 210A V2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case V2-PAK.

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In Stock: 7,303

Specifications

14 parameters
Product StatusObsolete
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C210A
Rds On (Max) @ Id, Vgs5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseV2-PAK
Supplier Device PackageV2-PAK

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