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SIGC76T60R3EX7SA1

In Stock: 4,767
SIGC76T60R3EX7SA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: SIGC76T60R3EX7SA1 Infineon Technologies
SIGC76T60R3EX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

SIGC76T60R3EX7SA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 3 CHIP 600V WAFER. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case Die, current - collector (ic) (max) 150 A.

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In Stock: 4,767

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)150 A
Current - Collector Pulsed (Icm)450 A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 150A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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