IGW75N65H5XKSA1

In Stock: 6,233
IGW75N65H5XKSA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: IGW75N65H5XKSA1 Infineon Technologies
IGW75N65H5XKSA1

Infineon Technologies

IGBT TRENCH 650V 120A TO247-3

IGW75N65H5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT TRENCH 650V 120A TO247-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 120 A.

In Stock: 6,233

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)300 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A
Power - Max395 W
Switching Energy2.25mJ (on), 950µJ (off)
Input TypeStandard
Gate Charge160 nC
Td (on/off) @ 25°C28ns/174ns
Test Condition400V, 75A, 8Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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