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SIGC12T60SNCX7SA2

In Stock: 4,055
SIGC12T60SNCX7SA2 - Infineon Technologies - Transistors - IGBTs - Single
REF: SIGC12T60SNCX7SA2 Infineon Technologies
SIGC12T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

SIGC12T60SNCX7SA2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 3 CHIP 600V WAFER. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die, current - collector (ic) (max) 10 A.

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In Stock: 4,055

Specifications

17 parameters
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)30 A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C29ns/266ns
Test Condition400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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