Name: SIGC121T60NR2CX1SA2
Brand: Infineon Technologies
SKU: SIGC121T60NR2CX1SA2
Availability: InStock

REF: SIGC121T60NR2CX1SA2 Infineon Technologies

SIGC121T60NR2CX1SA2

IGBT 3 CHIP 600V WAFER

SIGC121T60NR2CX1SA2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 3 CHIP 600V WAFER. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case Die, current - collector (ic) (max) 150 A.

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In Stock: 3,393

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	150 A
Current - Collector Pulsed (Icm)	450 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 150A
Power - Max	-
Switching Energy	-
Input Type	Standard

Gate Charge	-
Td (on/off) @ 25°C	125ns/225ns
Test Condition	300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die