SIGC109T120R3LEX1SA2

In Stock: 4,070
SIGC109T120R3LEX1SA2 - Infineon Technologies - Transistors - IGBTs - Single
REF: SIGC109T120R3LEX1SA2 Infineon Technologies
SIGC109T120R3LEX1SA2

Infineon Technologies

IGBT 1200V 100A DIE

SIGC109T120R3LEX1SA2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 100A DIE. Key specifications: mounting type Surface Mount, package / case Die.

In Stock: 4,070

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)300 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

Need a Quote for SIGC109T120R3LEX1SA2?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →