SGB15N120ATMA1

In Stock: 4,918
SGB15N120ATMA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: SGB15N120ATMA1 Infineon Technologies
SGB15N120ATMA1

Infineon Technologies

IGBT 1200V 30A 198W TO263-3

SGB15N120ATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 30A 198W TO263-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 30 A.

In Stock: 4,918

Specifications

17 parameters
Product StatusLast Time Buy
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)52 A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 15A
Power - Max198 W
Switching Energy1.9mJ
Input TypeStandard
Gate Charge130 nC
Td (on/off) @ 25°C18ns/580ns
Test Condition800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

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