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IRG8CH37K10F

In Stock: 2,113
IRG8CH37K10F - Infineon Technologies - Transistors - IGBTs - Single
REF: IRG8CH37K10F Infineon Technologies
IRG8CH37K10F

Infineon Technologies

IGBT 1200V 100A DIE

IRG8CH37K10F is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 100A DIE.

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In Stock: 2,113

Specifications

17 parameters
Product StatusDiscontinued at Digi-Key
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge210 nC
Td (on/off) @ 25°C35ns/190ns
Test Condition600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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