IRG8CH106K10F - Infineon Technologies - Transistors - IGBTs - Single
REF: IRG8CH106K10F Infineon Technologies
IRG8CH106K10F

Infineon Technologies

IGBT 1200V 110A DIE

IRG8CH106K10F is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 110A DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case Die.

In Stock: 9,890

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 110A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge700 nC
Td (on/off) @ 25°C80ns/380ns
Test Condition600V, 110A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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