Name: IRG8B08N120KDPBF
Brand: Infineon Technologies
SKU: IRG8B08N120KDPBF
Availability: InStock

REF: IRG8B08N120KDPBF Infineon Technologies

IRG8B08N120KDPBF

DIODE 1200V 8A TO-220

IRG8B08N120KDPBF is a Transistors - IGBTs - Single manufactured by Infineon Technologies. DIODE 1200V 8A TO-220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 15 A.

Datasheet Request a Quote

In Stock: 2,442

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	15 A
Current - Collector Pulsed (Icm)	15 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 5A
Power - Max	89 W
Switching Energy	300µJ (on), 300µJ (off)
Input Type	Standard

Gate Charge	45 nC
Td (on/off) @ 25°C	20ns/160ns
Test Condition	600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB