Name: IRG7PH35UDPBF
Brand: Infineon Technologies
SKU: IRG7PH35UDPBF
Availability: InStock

REF: IRG7PH35UDPBF Infineon Technologies

IRG7PH35UDPBF

IRG7PH35 - DISCRETE IGBT WITH AN

IRG7PH35UDPBF is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IRG7PH35 - DISCRETE IGBT WITH AN. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 50 A.

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In Stock: 7,546

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
Power - Max	180 W
Switching Energy	1.06mJ (on), 620µJ (off)
Input Type	Standard

Gate Charge	85 nC
Td (on/off) @ 25°C	30ns/160ns
Test Condition	600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	105 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC