IRG7CH81K10EF-R

In Stock: 5,357
IRG7CH81K10EF-R - Infineon Technologies - Transistors - IGBTs - Single
REF: IRG7CH81K10EF-R Infineon Technologies
IRG7CH81K10EF-R

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IRG7CH81K10EF-R is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V ULTRA FAST DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case Die.

In Stock: 5,357

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 150A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge745 nC
Td (on/off) @ 25°C70ns/330ns
Test Condition600V, 150A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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