IRF8513PBF - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: IRF8513PBF Infineon Technologies
IRF8513PBF

Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

IRF8513PBF is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 30V 8A/11A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 1.5W, 2.4W.

In Stock: 7,080

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A, 11A
Rds On (Max) @ Id, Vgs15.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds766pF @ 15V
Power - Max1.5W, 2.4W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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