IRF8313TRPBF - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: IRF8313TRPBF Infineon Technologies
IRF8313TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8SO

IRF8313TRPBF is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 30V 9.7A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.

In Stock: 5,383

Specifications

14 parameters
Product StatusNot For New Designs
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.7A
Rds On (Max) @ Id, Vgs15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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