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IPG20N10S4L35AATMA1

In Stock: 3,469
IPG20N10S4L35AATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: IPG20N10S4L35AATMA1 Infineon Technologies
IPG20N10S4L35AATMA1

Infineon Technologies

MOSFET 2N-CH 100V 20A 8TDSON

IPG20N10S4L35AATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 100V 20A 8TDSON. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerVDFN, power - max 43W.

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In Stock: 3,469

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1105pF @ 25V
Power - Max43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-10

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