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IPG20N04S409AATMA1

In Stock: 4,170
IPG20N04S409AATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: IPG20N04S409AATMA1 Infineon Technologies
IPG20N04S409AATMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

IPG20N04S409AATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerVDFN, power - max 54W (Tc).

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In Stock: 4,170

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
Power - Max54W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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