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IPG16N10S4L61AATMA1

In Stock: 7,902
IPG16N10S4L61AATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: IPG16N10S4L61AATMA1 Infineon Technologies
IPG16N10S4L61AATMA1

Infineon Technologies

MOSFET 2N-CH 100V 16A 8TDSON

IPG16N10S4L61AATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 100V 16A 8TDSON. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerVDFN, power - max 29W.

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In Stock: 7,902

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16A
Rds On (Max) @ Id, Vgs61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds845pF @ 25V
Power - Max29W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-10

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