Name: IKW30N65NL5
Brand: Infineon Technologies
SKU: IKW30N65NL5
Availability: InStock

REF: IKW30N65NL5 Infineon Technologies

IKW30N65NL5

IKW30N65 - DISCRETE IGBT WITH AN

IKW30N65NL5 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IKW30N65 - DISCRETE IGBT WITH AN. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 85 A.

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In Stock: 8,905

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	85 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 30A
Power - Max	227 W
Switching Energy	560µJ (on), 1.35mJ (off)
Input Type	Standard

Gate Charge	168 nC
Td (on/off) @ 25°C	59ns/283ns
Test Condition	400V, 30A, 23Ohm, 15V
Reverse Recovery Time (trr)	59 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3