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IKW30N65ET7XKSA1

In Stock: 220
IKW30N65ET7XKSA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: IKW30N65ET7XKSA1 Infineon Technologies
IKW30N65ET7XKSA1

Infineon Technologies

IKW30N65ET7XKSA1

IKW30N65ET7XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IKW30N65ET7XKSA1. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 30 A.

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In Stock: 220

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 30A
Power - Max188 W
Switching Energy590µJ (on), 500µJ (off)
Input TypeStandard
Gate Charge180 nC
Td (on/off) @ 25°C20ns/245ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)80 ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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