Name: IKW03N120H2
Brand: Infineon Technologies
SKU: IKW03N120H2
Availability: InStock

REF: IKW03N120H2 Infineon Technologies

IKW03N120H2

IGBT WITH ANTI-PARALLEL DIODE

IKW03N120H2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT WITH ANTI-PARALLEL DIODE. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 9.6 A.

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In Stock: 2,233

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	9.6 A
Current - Collector Pulsed (Icm)	9.9 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Power - Max	62.5 W
Switching Energy	290µJ
Input Type	Standard

Gate Charge	22 nC
Td (on/off) @ 25°C	9.2ns/281ns
Test Condition	800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)	42 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-1