Name: IKD10N60RAATMA2
Brand: Infineon Technologies
SKU: IKD10N60RAATMA2
Availability: InStock

REF: IKD10N60RAATMA2 Infineon Technologies

IKD10N60RAATMA2

IGBT 600V 20A 150W TO252-3

IKD10N60RAATMA2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 600V 20A 150W TO252-3. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 20 A.

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In Stock: 3,261

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 10A
Power - Max	150 W
Switching Energy	-
Input Type	Standard

Gate Charge	64 nC
Td (on/off) @ 25°C	14ns/192ns
Test Condition	400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)	62 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3