Name: IKD04N60RBTMA1
Brand: Infineon Technologies
SKU: IKD04N60RBTMA1
Availability: InStock

REF: IKD04N60RBTMA1 Infineon Technologies

IKD04N60RBTMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

IKD04N60RBTMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT WITHOUT ANTI-PARALLEL DIODE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 8 A.

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In Stock: 4,162

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	8 A
Current - Collector Pulsed (Icm)	12 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	75 W
Switching Energy	240µJ
Input Type	Standard

Gate Charge	27 nC
Td (on/off) @ 25°C	14ns/146ns
Test Condition	400V, 4A, 43Ohm, 15V
Reverse Recovery Time (trr)	43 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3-11