IHW30N100R - Infineon Technologies - Transistors - IGBTs - Single
REF: IHW30N100R Infineon Technologies
IHW30N100R

Infineon Technologies

IGBT 1000V 60A 412W TO247-3

IHW30N100R is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1000V 60A 412W TO247-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.

In Stock: 8,097

Specifications

17 parameters
Product StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 30A
Power - Max412 W
Switching Energy2.1mJ (off)
Input TypeStandard
Gate Charge209 nC
Td (on/off) @ 25°C-/846ns
Test Condition600V, 30A, 26Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-1

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