Name: IGW50N60T
Brand: Infineon Technologies
SKU: IGW50N60T
Availability: InStock

REF: IGW50N60T Infineon Technologies

IGW50N60T

IGW50N60 - DISCRETE IGBT WITHOUT

IGW50N60T is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGW50N60 - DISCRETE IGBT WITHOUT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 90 A.

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In Stock: 3,472

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	90 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Power - Max	333 W
Switching Energy	1.2mJ (on), 1.4mJ (off)
Input Type	Standard

Gate Charge	310 nC
Td (on/off) @ 25°C	26ns/299ns
Test Condition	400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3