Name: IGW30N60H3
Brand: Infineon Technologies
SKU: IGW30N60H3
Availability: InStock

REF: IGW30N60H3 Infineon Technologies

IGW30N60H3

IGW30N60 - DISCRETE IGBT WITHOUT

IGW30N60H3 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGW30N60 - DISCRETE IGBT WITHOUT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.

Datasheet Request a Quote

In Stock: 4,446

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Power - Max	187 W
Switching Energy	940µJ (on), 440µJ (off)
Input Type	Standard

Gate Charge	165 nC
Td (on/off) @ 25°C	21ns/207ns
Test Condition	400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3