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IGP01N120H2XKSA1

In Stock: 26,012
IGP01N120H2XKSA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: IGP01N120H2XKSA1 Infineon Technologies
IGP01N120H2XKSA1

Infineon Technologies

IGBT 1200V 3.2A 28W TO220-3

IGP01N120H2XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 3.2A 28W TO220-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 3.2 A.

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In Stock: 26,012

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)3.2 A
Current - Collector Pulsed (Icm)3.5 A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 1A
Power - Max28 W
Switching Energy140µJ
Input TypeStandard
Gate Charge8.6 nC
Td (on/off) @ 25°C13ns/370ns
Test Condition800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

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