Name: IGD10N65T6ARMA1
Brand: Infineon Technologies
SKU: IGD10N65T6ARMA1
Price: 1.63 USD
Availability: InStock

REF: IGD10N65T6ARMA1 Infineon Technologies

IGD10N65T6ARMA1

Infineon Technologies

IGD10N65T6ARMA1

IGD10N65T6ARMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGD10N65T6ARMA1. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 23 A.

Datasheet Request a Quote

In Stock: 3,000

Specifications

17 parameters

Product Status	Not For New Designs
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	23 A
Current - Collector Pulsed (Icm)	42.5 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 8.5A
Power - Max	75 W
Switching Energy	200µJ (on), 70µJ (off)
Input Type	Standard

Gate Charge	27 nC
Td (on/off) @ 25°C	30ns/106ns
Test Condition	400V, 8.5A, 47Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3