IGC13T120T8LX1SA1

In Stock: 4,131
IGC13T120T8LX1SA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: IGC13T120T8LX1SA1 Infineon Technologies
IGC13T120T8LX1SA1

Infineon Technologies

IGBT 1200V 10A SAWN ON FOIL

IGC13T120T8LX1SA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 10A SAWN ON FOIL. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case Die.

In Stock: 4,131

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)30 A
Vce(on) (Max) @ Vge, Ic2.07V @ 15V, 8A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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