Name: IGB50N65S5ATMA1
Brand: Infineon Technologies
SKU: IGB50N65S5ATMA1
Price: 3.95 USD
Availability: InStock

REF: IGB50N65S5ATMA1 Infineon Technologies

IGB50N65S5ATMA1

Infineon Technologies

IGBT TRENCH/FS 650V 80A TO263-3

IGB50N65S5ATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT TRENCH/FS 650V 80A TO263-3. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 80 A.

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In Stock: 1,964

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 50A
Power - Max	270 W
Switching Energy	1.23mJ (on), 740µJ (off)
Input Type	Standard

Gate Charge	120 nC
Td (on/off) @ 25°C	20ns/139ns
Test Condition	400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3