Name: IGB01N120H2ATMA1
Brand: Infineon Technologies
SKU: IGB01N120H2ATMA1
Price: 1.08 USD
Availability: InStock

REF: IGB01N120H2ATMA1 Infineon Technologies

IGB01N120H2ATMA1

Infineon Technologies

IGBT 1200V 3.2A 28W TO263-3-2

IGB01N120H2ATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGBT 1200V 3.2A 28W TO263-3-2. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 3.2 A.

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In Stock: 9,106

Specifications

17 parameters

Product Status	Last Time Buy
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	3.2 A
Current - Collector Pulsed (Icm)	3.5 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 1A
Power - Max	28 W
Switching Energy	140µJ
Input Type	Standard

Gate Charge	8.6 nC
Td (on/off) @ 25°C	13ns/370ns
Test Condition	800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2