Name: IGA03N120H2
Brand: Infineon Technologies
SKU: IGA03N120H2
Availability: InStock

REF: IGA03N120H2 Infineon Technologies

IGA03N120H2

IGA03N120 - DISCRETE IGBT WITHOU

IGA03N120H2 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IGA03N120 - DISCRETE IGBT WITHOU. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 8.2 A.

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In Stock: 3,020

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	8.2 A
Current - Collector Pulsed (Icm)	9 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Power - Max	29 W
Switching Energy	140µJ (on), 150µJ (off)
Input Type	Standard

Gate Charge	8.6 nC
Td (on/off) @ 25°C	9.2ns/281ns
Test Condition	800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	PG-TO220-3-31