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FZ3600R17HE4NPSA1

In Stock: 6,930
FZ3600R17HE4NPSA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: FZ3600R17HE4NPSA1 Infineon Technologies
FZ3600R17HE4NPSA1

Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

FZ3600R17HE4NPSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. INSULATED GATE BIPOLAR TRANSISTO.

Datasheet Request a Quote

In Stock: 6,930

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Microsemi Corporation Micro Commercial Co Toshiba Semiconductor and Storage IXYS Rectron USA Alpha & Omega Semiconductor Inc. NTE Electronics, Inc Sanken Sanyo SemiQ

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