Name: FF8MR12W2M1B11BOMA1
Brand: Infineon Technologies
SKU: FF8MR12W2M1B11BOMA1
Price: 326.66 USD
Availability: InStock

REF: FF8MR12W2M1B11BOMA1 Infineon Technologies

FF8MR12W2M1B11BOMA1

Infineon Technologies

MOSFET 2N-CH 1200V AG-EASY2BM-2

FF8MR12W2M1B11BOMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 1200V AG-EASY2BM-2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, power - max 20mW (Tc).

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In Stock: 7,414

Specifications

14 parameters

Product Status	Last Time Buy
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	150A (Tj)
Rds On (Max) @ Id, Vgs	7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id	5.55V @ 60mA

Gate Charge (Qg) (Max) @ Vgs	372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 800V
Power - Max	20mW (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-EASY2BM-2