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F415MR12W2M1B76BOMA1

In Stock: 6
F415MR12W2M1B76BOMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: F415MR12W2M1B76BOMA1 Infineon Technologies
F415MR12W2M1B76BOMA1

Infineon Technologies

LOW POWER EASY AG-EASY2B-2

F415MR12W2M1B76BOMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. LOW POWER EASY AG-EASY2B-2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module.

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In Stock: 6

Specifications

14 parameters
Product StatusLast Time Buy
FET Type4 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C75A (Tj)
Rds On (Max) @ Id, Vgs15mOhm @ 75A, 15V
Vgs(th) (Max) @ Id5.55V @ 30mA
Gate Charge (Qg) (Max) @ Vgs186nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds5.52nF @ 800V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B-2

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