Name: BSO615NGHUMA1
Brand: Infineon Technologies
SKU: BSO615NGHUMA1
Availability: InStock

REF: BSO615NGHUMA1 Infineon Technologies

BSO615NGHUMA1

MOSFET 2N-CH 60V 2.6A 8SOIC

BSO615NGHUMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 60V 2.6A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W.

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In Stock: 3,821

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.6A
Rds On (Max) @ Id, Vgs	150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8