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BSG0813NDIATMA1

In Stock: 4,966
BSG0813NDIATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: BSG0813NDIATMA1 Infineon Technologies
BSG0813NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/33A TISON8

BSG0813NDIATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 25V 19A/33A TISON8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 155°C (TJ), package / case 8-PowerTDFN, power - max 2.5W.

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In Stock: 4,966

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A, 33A
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 12V
Power - Max2.5W
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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