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BSC750N10NDGATMA1

In Stock: 6,109
BSC750N10NDGATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: BSC750N10NDGATMA1 Infineon Technologies
BSC750N10NDGATMA1

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

BSC750N10NDGATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 100V 3.2A 8TDSON. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 26W.

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In Stock: 6,109

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.2A
Rds On (Max) @ Id, Vgs75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds720pF @ 50V
Power - Max26W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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