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BSC0910NDIATMA1

In Stock: 9,270
BSC0910NDIATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Arrays
REF: BSC0910NDIATMA1 Infineon Technologies
BSC0910NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 16A/31A TISON8

BSC0910NDIATMA1 is a Transistors - FETs, MOSFETs - Arrays manufactured by Infineon Technologies. MOSFET 2N-CH 25V 16A/31A TISON8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 1W.

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In Stock: 9,270

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C11A, 31A
Rds On (Max) @ Id, Vgs4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 12V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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