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AIKW50N65DF5XKSA1

In Stock: 1,524
AIKW50N65DF5XKSA1 - Infineon Technologies - Transistors - IGBTs - Single
REF: AIKW50N65DF5XKSA1 Infineon Technologies
AIKW50N65DF5XKSA1

Infineon Technologies

IC DISCRETE 650V TO247-3

AIKW50N65DF5XKSA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IC DISCRETE 650V TO247-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 175°C (TJ), package / case TO-247-3, power - max 270 W.

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In Stock: 1,524

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max270 W
Switching Energy490µJ (on), 140µJ (off)
Input TypeStandard
Gate Charge1018 nC
Td (on/off) @ 25°C21ns/156ns
Test Condition400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

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