Name: AIHD10N60RFATMA1
Brand: Infineon Technologies
SKU: AIHD10N60RFATMA1
Availability: InStock

REF: AIHD10N60RFATMA1 Infineon Technologies

AIHD10N60RFATMA1

IC DISCRETE 600V TO252-3

AIHD10N60RFATMA1 is a Transistors - IGBTs - Single manufactured by Infineon Technologies. IC DISCRETE 600V TO252-3. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 20 A.

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In Stock: 2,088

Specifications

17 parameters

Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
Power - Max	150 W
Switching Energy	190µJ (on), 160µJ (off)
Input Type	Standard

Gate Charge	64 nC
Td (on/off) @ 25°C	12ns/168ns
Test Condition	400V, 10A, 26Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3-313