G06NP06S2 - Goford Semiconductor - Transistors - FETs, MOSFETs - Arrays
REF: G06NP06S2 Goford Semiconductor
G06NP06S2

Goford Semiconductor

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

G06NP06S2 is a Transistors - FETs, MOSFETs - Arrays manufactured by Goford Semiconductor. N/P60V,RD(MAX)<35M@10V,RD(MAX)<4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2W (Tc), 2.5W (Tc).

In Stock: 2,888

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W (Tc), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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