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FDMD8900

In Stock: 15,710
FDMD8900 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Arrays
REF: FDMD8900 Fairchild Semiconductor
FDMD8900

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, N

FDMD8900 is a Transistors - FETs, MOSFETs - Arrays manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, N. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 12-PowerWDFN, power - max 2.1W.

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In Stock: 15,710

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A, 17A
Rds On (Max) @ Id, Vgs4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2605pF @ 15V
Power - Max2.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case12-PowerWDFN
Supplier Device Package12-Power3.3x5

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