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EPC2110ENGRT

In Stock: 6,762
EPC2110ENGRT - EPC - Transistors - FETs, MOSFETs - Arrays
REF: EPC2110ENGRT EPC
EPC2110ENGRT

EPC

GAN TRANS 2N-CH 120V BUMPED DIE

EPC2110ENGRT is a Transistors - FETs, MOSFETs - Arrays manufactured by EPC. GAN TRANS 2N-CH 120V BUMPED DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.

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In Stock: 6,762

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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