Name: EPC2106ENGRT
Brand: EPC
SKU: EPC2106ENGRT
Availability: InStock

REF: EPC2106ENGRT EPC

EPC2106ENGRT

GAN TRANS 2N-CH 100V BUMPED DIE

EPC2106ENGRT is a Transistors - FETs, MOSFETs - Arrays manufactured by EPC. GAN TRANS 2N-CH 100V BUMPED DIE. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case Die.

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In Stock: 5,442

Specifications

14 parameters

Product Status	Discontinued at Digi-Key
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.7A
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id	2.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs	0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 50V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die