| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFN210N30X3
MOSFET N-CH 300V 210A SOT227B
IXYS
|
7,155 | 47.21000 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 210A (Tc) | 10V | 4.6mOhm @ 105A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 24200 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
SIHB30N60ET1-GE3
N-CHANNEL 600V
Vishay Siliconix
|
800 | 6.35000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
IRFI840GPBF
MOSFET N-CH 500V 4.6A TO220-3
Vishay Siliconix
|
4,870 | 3.14000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | Details |
|
IXTH02N250
MOSFET N-CH 2500V 200MA TO247
IXYS
|
1,780 | 18.00000 | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4 nC @ 10 V | ±20V | 116 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 | Details |
|
MTD6N10E1
NFET DPAK 100V 0.40R
onsemi
|
19,015 | 0.19000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
STP33N60M2
MOSFET N-CH 600V 26A TO220
STMicroelectronics
|
1,307 | 5.11000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5 nC @ 10 V | ±25V | 1781 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
IXFH26N50P
MOSFET N-CH 500V 26A TO247AD
IXYS
|
7,853 | 7.98000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5.5V @ 4mA | 60 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 | Details |
|
HUF75343S3
75 A, 55 V, 0.009 OHM, N-CHANNEL
Harris Corporation
|
557 | 1.00000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
FBG10N05AC
GAN FET HEMT 100V5A COTS 4FSMD-A
EPC Space, LLC
|
68 | 313.40000 | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 5A (Tc) | 5V | 44mOhm @ 5A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead | Details |
|
IRLR2905TRPBF
MOSFET N-CH 55V 42A DPAK
Infineon Technologies
|
38,977 | 1.66000 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMN6070SFCL-7
MOSFET N-CH 60V 3A X1-DFN1616-6
Diodes Incorporated
|
1,228 | 0.49000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4V, 10V | 85mOhm @ 1.5A, 10V | 3V @ 250µA | 12.3 nC @ 10 V | ±20V | 606 pF @ 20 V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1616-6 (Type E) | 6-PowerUFDFN | Details |
|
CSD25481F4
MOSFET P-CH 20V 2.5A 3PICOSTAR
Texas Instruments
|
8,719 | 0.50000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 1.8V, 4.5V | 88mOhm @ 500mA, 8V | 1.2V @ 250µA | 0.913 nC @ 4.5 V | -12V | 189 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN | Details |
|
IPB60R045P7ATMA1
MOSFET N-CH 600V 61A TO263-3-2
Infineon Technologies
|
706 | 9.93000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
BUK9D23-40EX
MOSFET N-CH 40V 8A DFN2020MD-6
Nexperia USA Inc.
|
6,299 | 0.44000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 4.5V, 10V | 23mOhm @ 8A, 10V | 2.1V @ 250µA | 17 nC @ 10 V | ±15V | 637 pF @ 20 V | - | 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad | Details |
|
IXFP14N60P
MOSFET N-CH 600V 14A TO220AB
IXYS
|
2,765 | 3.45460 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 2.5mA | 36 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | Details |
|
ATP201-TL-H
MOSFET N-CH 30V 35A ATPAK
onsemi
|
15,000 | 0.32000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta) | 4.5V, 10V | 17mOhm @ 18A, 10V | - | 17 nC @ 10 V | ±20V | 985 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) | Details |
|
SIHA18N60E-GE3
N-CHANNEL 600V
Vishay Siliconix
|
1,738 | 3.32000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack | Details |
|
2SK1838L-E
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
2,333 | 1.98000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
BSZ099N06LS5ATMA1
MOSFET N-CH 60V 46A TSDSON
Infineon Technologies
|
7,673 | 1.09000 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 46A (Tc) | 4.5V, 10V | 9.9mOhm @ 20A, 10V | 2.3V @ 14µA | 3.1 nC @ 4.5 V | ±20V | 1300 pF @ 30 V | Standard | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN | Details |
|
FDMC510P
MOSFET P-CH 20V 12A/18A 8MLP
onsemi
|
38 | 1.97000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta), 18A (Tc) | 1.5V, 4.5V | 8mOhm @ 12A, 4.5V | 1V @ 250µA | 116 nC @ 4.5 V | ±8V | 7860 pF @ 10 V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN | Details |
|
STP11NM60ND
MOSFET N-CH 600V 10A TO220AB
STMicroelectronics
|
3,485 | 4.48000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 | Details |
|
PSMN2R0-30YLE,115
MOSFET N-CH 30V 100A LFPAK56
Nexperia USA Inc.
|
3,726 | 2.02000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2mOhm @ 25A, 10V | 2.15V @ 1mA | 87 nC @ 10 V | ±20V | 5217 pF @ 15 V | - | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
IXFN74N100X
MOSFET N-CH 1000V 74A SOT227B
IXYS
|
7,072 | 89.68000 | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 74A (Tc) | 10V | 66mOhm @ 37A, 10V | 5.5V @ 8mA | 425 nC @ 10 V | ±30V | 17000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
IPD50N06S214ATMA2
MOSFET N-CH 55V 50A TO252-31
Infineon Technologies
|
7,226 | 1.07580 | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
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